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OM5N100NK OM6N100NK
POWER MOSFETS IN A TO-3 PACKAGE
1000V, Up To 6 Amp, N-Channel MOSFETs In A TO-3 Package
FEATURES
* * * * * TO-3 Hermetic Package, .060 Dia. Leads Fast Switching Low RDS(on) 1000 Volt, Size 5 Die Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER OM5N100NK OM6N100NK VDS (V) 1000 1000 RDS(on) ( ) 3.0 2.0 ID (A) 5.0 6.0
3.1
MECHANICAL OUTLINE
1.53 REF. 0.875 MAX. 0.450 0.250 0.312 MIN. 0.063 2 PLCS. 0.058
Pin Connection Pin 1: Gate Pin 2: Source Case: Drain
1.197 1.177 0.675 0.655 0.188 R. MAX.
2
0.440 0.420
0.135 MAX. SEATING PLANE
0.225 0.205 0.161 0.151
1
0.525 R. MAX.
4 11 R1 Supersedes 3 12 R0
3.1 - 41
3.1
OM5N100NK - OM6N100NK
ELECTRICAL CHARACTERISTICS:
Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) On-State Drain Current 5.0 2.0 1000
TC = 25 unless otherwise noted
V 4.0 100 - 100 0.25 1.0 V nA nA mA mA A 3.0 6.0 2.0 4.0 VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V, VDS = 0 VGS = - 20 V, VDS = 0 VDS = Max. Rat., VGS = 0 VDS = 0.8 x Max. Rat., VGS = 0, TC = 125 C VDS > ID(on) x RDS(on)Max., VGS = 10 V VGS = 10 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A TC = 100 C VGS = 10 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A TC = 100 C
ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Symbol VDS VDGR ID @ TC = 25C ID @ TC = 100C IDM VGS PD @ TC = 25C PD @ TC =100C Junction-To-Case Parameter Drain-Source Voltage Drain-Source Voltage (RGS = 20k ) Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 OM5N100NK OM6N100NK 1000 1000 5.0 3.1 24 20 130 51 1.00 .033 1000 1000 6.0 3.7 24 20 130 51 1.00 .033 Units V V A A A V W W W/C W/C
Min. Typ. Max. Units Test Conditions
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
IGSSF IGSSR IDSS
Gate-Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
RDS(on) Static Drain-Source On-State Resistance1 - OM5N100NK RDS(on) Static Drain-Source On-State Resistance1 - OM5N100NK RDS(on) Static Drain-Source On-State Resistance1 - OM6N100NK RDS(on) Static Drain-Source On-State Resistance1 - OM6N100NK
Junction-To-Ambient Linear Derating Factor TJ Tstg Lead Temperature Operating and Storage Temperature Range (1/16" from case for 10secs.)
-55 to 150 300
-55 to 150 300
C C
DYNAMIC
gfs Ciss Coss Crss Td(on) tr td (off) tf Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 4.0 2800 350 130 65 55 62 25 S pF pF pF ns ns ns ns VDS = 25V, ID = 3.5 A VGS = 0 VDS = 25 V f = 1 MHz VDD = 400 V, ID = 6 A Rg = 7 W , VGS = 10 V VDD = 800 V, ID = 6 A, RG = 7 , VBS = 10 V
1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%.
THERMAL RESISTANCE (Maximum) at TA = 25C
RthJC RthJA Junction-To-Case Junction-to-Ambient Max. 1.0 30 C/W C/W Free Air Operation
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Continuous Source Current (Body Diode) Source Current2 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 1100 2.5 V ns 24 A 6 A
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G D
S
TC = 25 C, IS = 6 A, VGS = 0 IF = IS, VDD = 100V, dlF/ds = 100 A/ms, TJ = 150C
1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area.

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